1200V N-channel SiC MOSFET

General Feature

• Fast Switching with Low EMI/RFI

• Low Gate Charge Minimize Switching Loss

• Short Circuit Withstand Rated

• Low R_DS(_ON) Temperature Coefficient for Improve Efficiency

Applications

• Asymmetrical Bridge

• Converter

• Inverter

• Single Switch Forward

• Flyback

Ordering Information

Absolute Maximum Ratings